Thermodynamic analysis of anion exchange during heteroepitaxy
نویسندگان
چکیده
منابع مشابه
Thermodynamic analysis of anion exchange during heteroepitaxy
A thermodynamic approach is presented to assess the extent of anion exchange reactions during the heteroepitaxy (molecular beam epitaxy) of dissimilar anion III–V compound semiconductor structures. It is shown that the extent of anion exchange can be predicted by the change in the Gibbs free energy. Bond strength changes can only be used as a guide in comparing the relative tendency for exchang...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2002
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(02)01288-5